Ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction: Theory and experiment

Journal of Alloys and Compounds

Volumn 286, Issue 1-2, 1999, Pages 31-36

  Nilsson, P O ^a   Mankefors, S ^a   Lundgren, E ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF VIENNA   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; ULTRATHIN FILMS; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

X RAY EMISSION SPECTROSCOPY (SXE);

SEMICONDUCTING SILICON;

EID: 0032621851     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(98)00976-1     Document Type: Article

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