Model Study of Ballistic S-2DEG-S Josephson Field Effect Transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 354-356

  Wendin, Göran ^a   Shumeiko, Vitaly S ^a   Samuelsson, Peter ^a   Takayanagi, Hideaki ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Andreev reflection; Ballistic transport; Field effect; Josephson effect; Superconductivity; Transistor

Indexed keywords

CRITICAL CURRENTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); HETEROJUNCTIONS; MATHEMATICAL MODELS; SUPERCONDUCTIVITY;

ANDREEV REFLECTION; JOSEPHSON CURRENT; JOSEPHSON FIELD EFFECT TRANSISTORS (JOFET);

JOSEPHSON JUNCTION DEVICES;

EID: 0032621342     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.354     Document Type: Article

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