Internal photoemission characteristics of metal-insulator-semiconductor structures at low electric fields in the insulator

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6610-6618

  Przewlocki, H M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; PHOTOCURRENTS; PHOTOEMISSION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

PHOTOCURRENT-VOLTAGE CHARACTERISTICS;

MIS DEVICES;

EID: 0032620356     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370169     Document Type: Article

References (29)

1. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
2. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).
3. H. M. Przewlocki, J. Appl. Phys. 78, 2550 (1995).
4. H. M. Przewlocki, Electron Technol. 26, 3 (1993).
5. H. M. Przewlocki, Electron Technol. 27, 7 (1994).
6. E. Janke, F. Emde, and F. Lösch, Tafeln Höherer Funktionen (in German) (B. G. Teubner Verlagsgesellschaft, Stuttgart, 1960).
7. F. E. Relton, Applied Bessel Functions (Dover, New York, 1965).
8. N. N. Lebiediew, Funkcje Specjalne i ich Zastosowania (in Polish) (PWN, Warszawa, 1957).
9. H. Hochstadt, The Functions of Mathematical Physics (Dover, New York, 1986).
10. W. Shockley and R. C. Prim, Phys. Rev. 90, 753 (1953).
11. G. H. Suits, J. Appl. Phys. 28, 454 (1957).
12. E. I. Adirovicz, Solid State Phys. 2, 1410 (1960).
13. H. M. Przewlocki, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel et al. (Kluwer, Dordrecht, 1998), p. 343.
14. M. Abramovitz and I. A. Stegun, Handbook of Mathematical Functions (Dover, New York, 1965).
15. W. J. Thompson, Atlas for Computing Mathematical Functions (Wiley, New York, 1997).
16. S. Wolfram, The Mathematica Book, 3rd ed. (Wolfram Media, Champaign, IL, 1996).
17. T. B. Bahder, Mathematica for Scientists and Engineers (Addison-Wesley, Reading, 1995).
18. W. T. Shaw and J. Tigg, Applied Mathematica (Addison-Wesley, Reading, 1994).
19. Strictly speaking, one should also find individual values of N(0) and N(1) (not only their ratio), since the curvature of J = f(Δφ) characteristic for, e.g., N(0) = 100 and N(1) = 10, differs slightly from the curvature of the characteristic for N(0) = 10 and N(1) = 1, although the N(0)/N(1) ratio is the same in both cases. Hence, individual N(0) and N(1) values can be found by comparing curvatures of theoretical and experimental characteristics. Procedures applied to achieve this goal will be described elsewhere (Ref. 20).
20. H. M. Przewlocki (unpublished).
21. A. Kudła, D. Brzezińska, T. Wagner, and Z. Sawicki, Proc. SPIE 3094, 317 (1997).
22. A. Kudła, D. Brzezińska, and T. Wagner, Elektronika 4, 22 (1997).
23. A. Kudła, Ph.D. thesis, ITE, Warsaw, 1998.
24. H. M. Przewlocki, S. Krawczyk, and A. Jakubowski, Phys. Status Solidi A 65, 253 (1981).
25. S. K. Krawczyk, H. M. Przewlocki, and A. Jakubowski, Rev. Phys. Appl. 17, 473 (1982).
26. H. M. Przewlocki, in Proceedings of the International Workshop Physics of Semiconductor Devices, edited by S. C. Jain and S. Radhakrishna (Wiley Eastern, New Delhi, 1982), p. 191.
27. H. M. Przewlocki, H. Z. Massoud, US-Poland MCS Fund II, Project MP/NIST-94-200 Final Report (Warsaw, Poland, Durham, N.C. USA, 1998).
28. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
29. There is an error in Eq. 10.4.66 of Ref. 14. The factor (-1)k should be omitted in this equation.