Thickness dependence of leakage current in BaBi2Ta2O9 thin films

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 552-554

  Foschini, C R ^a   Longo, E ^a   Varela, J A ^a   Desu, S B ^b  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b University of Massachusetts   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CAPACITANCE MEASUREMENT; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; FERROELECTRIC MATERIALS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; SILICA; THIN FILMS; VOLTAGE MEASUREMENT;

BARIUM BISMUTH TANTALUM OXIDES;

DIELECTRIC FILMS;

EID: 0032614846     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124419     Document Type: Article

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