Effective lifetime of electrons trapped in the oxide of a metal-oxide-semiconductor structure

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 522-524

  Khosru, Quazi Deen Mohd ^a,b   Uddin, Md Nasir ^a   Khan, M Rezwan ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^b ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRONS; HOT CARRIERS; QUANTUM THEORY; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

EFFECTIVE LIFETIME;

MOS DEVICES;

EID: 0032614577     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124435     Document Type: Article

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