Photoreflectance mapping of InAlAs Schottky diode layer on InAlAs/ InGaAs high electron mobility transistor wafers

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 374-379

  Sugiyama, H ^b   Yokoyama, H ^b   Wada, K ^a,b  

^a Massachusetts Institute of Technology   (United States)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT REFLECTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

FRANZ-KELDYSH OSCILLATIONS;

SCHOTTKY BARRIER DIODES;

EID: 0032614142     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370741     Document Type: Article

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