Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy

Applied Physics Letters

Volumn 75, Issue 8, 1999, Pages 1128-1130

  Kozhevnikov, M ^a   Narayanamurti, V ^a   Mascarenhas, A ^b   Zhang, Y ^b   Olson, J M ^b   Smith, D L ^c  

^a HARVARD UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON MICROSCOPY; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSPORT PROPERTIES;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); ORDERING-INDUCED BAND STRUCTURE EFFECTS; SECOND VOLTAGE DERIVATIVES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032614047     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124618     Document Type: Article

References (28)

1. S.-H. Wei and A. Zunger, Appl. Phys. Lett. 56, 662 (1990).
2. S.-H. Wei, D. B. Laks, and A. Zunger, Appl. Phys. Lett. 62, 1937 (1993).
3. Y. Zhang, A. Mascarenhas, P. Ernst, F. A. J. M. Driessen, D. J. Friedman, C. Geng, F. Scholz, and H. Schweizer, J. Appl. Phys. 81, 6365 (1997).
4. T. Fukui, J. Cryst. Growth 93, 301 (1988).
5. S. R. Kurtz, J. M. Olson, and A. Kibbler, Appl. Phys. Lett. 57, 1922 (1990).
6. E. Greger, P. Riel, M. Moser, T. Kippenberg, P. Kiesel, and G. H. Döhler, Appl. Phys. Lett. 71, 3245 (1997).
7. R. Wirth, A. Moritz, F. Scholz, and A. Hangleiter, Appl. Phys. Lett. 69, 2225 (1996).
8. Y. Zhang and A. Mascarenhas, Phys. Rev. B 55, 13100 (1997).
9. M. K. Lee, R. H. Horng, and L. C. Haung, J. Appl. Phys. 72, 5420 (1992).
10. K. Nakano, A. Toda, T. Yamamoto, and A. Ishibashi, Appl. Phys. Lett. 61, 1959 (1992).
11. R. Wirth, A. Moritz, C. Geng, F. Scholz, and A. Hangleiter, Phys. Rev. B 55, 1730 (1997).
12. McDermott, K. G. Reid, N. A. El-Masry, S. M. Bedair, W. M. Duncan, X. Yin, and F. H. Pollak, Appl. Phys. Lett. 56, 1172 (1990).
13. W. J. Kaiser and L. D. Bell, Phys. Rev. Lett. 60, 1406 (1988).
14. L. D. Bell, S. J. Manion, M. H. Hecht, W. J. Kaiser, R. W. Fathauer, and A. M. Milliken, Phys. Rev. B 48, 5712 (1993).
15. L. D. Bell, A. M. Milliken, S. J. Manion, W. J. Kaiser, R. W. Fathauer, and W. T. Pike, Phys. Rev. B 50, 8021 (1994).
16. E. Y. Lee, S. Bhargava, M. A. Chin, and V. Narayanamurti, J. Vac. Sci. Technol. A 15, 1351 (1997).
17. J. J. O'Shea, E. G. Brasel, M. E. Rubin, S. Bhargava, M. A. Chin, and V. Narayanamurti, Phys. Rev. B 56, 2026 (1997).
18. For review, see, e.g., V. Narayanamurti, Sci. Rep. Res. Inst. Tokohu Univ. A, Phys. Chem. Metall. 44, 165 (1997).
19. D. L. Smith and S. M. Kogan, Phys. Rev. B 54, 10354 (1996).
20. G. B. Stringfellow and G. S. Chen, J. Vac. Sci. Technol. B 9, 2182 (1991).
21. D. J. Friedman, J. G. Zhu, A. E. Kibber, J. M. Olson, and J. Moreland, Appl. Phys. Lett. 63, 1774 (1993).
22. D. Biswas, N. Debbar, P. Bhattacharya, M. Razeghi, M. Defour, and F. Omnes, Appl. Phys. Lett. 56, 833 (1990).
23. J. J. O'Shea, C. M. Reaves, S. P. DenBaars, M. A. Chin, and V. Narayanamurti, Appl. Phys. Lett. 69, 3022 (1996).
24. D. L. Smith, E. Y. Lee, and V. Narayanamurti, Phys. Rev. Lett. 80, 2433 (1998).
25. M. Kozhevnikov, V. Narayanamurti, C. Zheng, Y. Chiu, and D. Smith, Phys. Rev. Lett. 82, 3677 (1999).
26. S. R. Kurtz, J. Appl. Phys. 74, 4130 (1993).
27. S. H. Kwok, P. Y. Yu, and K. Uchida, Phys. Rev. B 58, R13395 (1998).
28. T. Kippenberg, J. Krauss, J. Spieler, P. Kiesel, G. H. Dohler, R. Stubner, R. Winkler, O. Pankratov, and M. Moser (unpublished).