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Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 1948-1950

Laser-induced selective area band-gap tuning in Si/Si1-xGex microstructures

(5) Dubowski, J J a Rowell, N a Aers, G C a Lafontaine, H b Houghton, D C b

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b SiGe Microsystems (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ENERGY GAP; HIGH POWER LASERS; LASER BEAMS; LASER TUNING; NEODYMIUM LASERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

SELECTIVE AREA BAND-GAP TUNING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032613840 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123737 Document Type: Article

Times cited : (10)

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