Deep hole traps in Be-doped Al0.5Ga0.5As layers grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 86, Issue 3, 1999, Pages 1433-1438

  Szatkowski, J ^a   Placzek Popko E ^a   Sieranski K ^a   Hansen, O P ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTATIONAL METHODS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ELECTRON TRAPS; HOLE TRAPS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE; POOLE-FRENKEL RELATION;

SEMICONDUCTING FILMS;

EID: 0032613647     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370907     Document Type: Article

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