High-efficiency p-i-n detectors for the visible spectral range based on ZnSTe-ZnTe superlattices

Applied Physics Letters

Volumn 74, Issue 22, 1999, Pages 3404-3406

  Faschinger, W ^a   Ehinger, M ^a   Schallenberg, T ^a   Korn, M ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

PHOTON ENERGY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032613510     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123359     Document Type: Article

References (6)

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2. R. Hill and D. Richardson, J. Phys. C 6, L115 (1973).
3. For an overview, see P. J. Parbrook and K. P. O'Donnel, in II-VI Semi-conductor Compounds, edited by M. Jain (World Scientific, Singapore, 1993).
4. K. S. Wong, H. Wang, I. K. Sou, G. K. L. Wong, and D. J. Mowbray, J. Cryst. Growth 159, 689 (1996).
5. M. Korn, T. Gerhard, H. R. Ress, D. Albert, A. Gerhard, C. Schumacher, and W. Faschinger, J. Cryst. Growth 184/185, 62 (1998).
6. M. Korn, M. Li, S. Tiong-Palisoc, M. Rauch, and W. Faschinger, Phys. Rev. B 59, 10670 (1999).