Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses

Applied Physics Letters

Volumn 75, Issue 3, 1999, Pages 364-366

  Schmidt, D C ^a,b   Svensson, B G ^a   Barbot, J F ^b   Blanchard, C ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; ANNEALING; DIFFUSION IN SOLIDS; DISSOCIATION; SILICON;

ALPHA PARTICLES IMPLANTATION; INTERSTITIAL CLUSTER DISSOCIATION; PROXIMITY GETTERING; SUBSTITUTIONAL PLATINUM;

PLATINUM;

EID: 0032607930     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124376     Document Type: Article

References (27)

1. V. Raineri, A. Battaglia, and E. Rimini, Nucl. Instrum. Methods Phys. Res. B 96, 249 (1995).
2. A. Kinomura, J. S. Williams, J. Wong-Leung, and M. Petravic, Nucl. Instrum. Methods Phys. Res. B 127/128, 297 (1997).
3. G. R. Lahiji, A. R. Peaker, and B. Hamilton, Inst. Phys. Conf. Ser. 104, 239 (1989).
4. W. Lerch, N. A. Stolwijk, H. Mehrer, and C. Poisson, Semicond. Sci. Technol. 10, 1257 (1995).
5. A. Cacciato, C. M. Camalleri, G. Franco, V. Raineri, and S. Coffa, J. Appl. Phys. 80, 4322 (1996).
6. B. Holm and K. Bonde Nielsen, J. Appl. Phys. 78, 5970 (1995).
7. D. C. Schmidt, B. G. Svensson, N. Keskitalo, S. Godey, E. Ntsoenzok, J. F. Barbot, and C. Blanchard, J. Appl. Phys. 84, 4214 (1998).
8. W. Schröter and M. Seibt, Deep Levels of Metal Impurities in Silicon, in EMIS data reviews series, "Properties of Silicon" (in press).
9. F. C. Frank and D. Turnbull, Phys. Rev. 104, 617 (1956).
10. U. Gösele, W. Frank, and A. Seeger, Appl. Phys. 23, 361 (1980).
11. M. Jacob, P. Pichler, H. Ryssel, and R. Falster, J. Appl. Phys. 82, 182 (1997).
12. J. L. Hastings, S. K. Estreicher, and P. A. Fedders, Phys. Rev. B 56, 10215 (1997).
13. The Stopping and Range of Ions in Matter (version 1998.01); J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985); for further information and download see also http://www.research.ibm.com/ionbeams/home.htm
14. The Stopping and Range of Ions in Matter (version 1998.01); J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985); for further information and download see also http://www.research.ibm.com/ionbeams/home.htm
15. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
16. B. G. Svensson, K.-H. Rydén, and B. M. S. Lewerentz, J. Appl. Phys. 66, 1699 (1989).
17. W. Schröter and M. Seibt, Deep Levels of Metal Impurities in Silicon, in EMIS data reviews series, "Properties of Silicon" (in press).
18. D. C. Schmidt, B. G. Svensson, S. Godey, E. Ntsoenzok, J. F. Barbot, and C. Blanchard, Appl. Phys. Lett. 74, 3329 (1999).
19. O. Scheerer, M. Höhne, U. Juda, and H. Riemann, J. Appl. Phys. 82, 3456 (1997).
20. U. Juda, O. Scheerer, M. Höhne, H. Riemann, H.-J. Schilling, J. Donecker, and A. Gerhardt, J. Appl. Phys. 80, 3435 (1996).
21. M. Höhne, U. Juda, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan, and L. S. Vlasenko, Mater. Sci. Forum 143/147, 1659 (1994).
22. R. A. Brown, O. Kononchuk, G. A. Rozgonyi, S. Koveshnikov, A. P. Knights, P. J. Simpson, and F. González, J. Appl. Phys. 84, 2459 (1998).
23. M. Jaraiz, G. H. Gilmer, J. M. Poate, and T. D. de la Rubia, Appl. Phys. Lett. 68, 409 (1996).
24. P. K. Giri and Y. N. Mohapatra, J. Appl. Phys. 84, 1901 (1998).
25. J. L. Benton, K. Halliburton, S. Libertino, D. J. Eaglesham, and S. Coffa, J. Appl. Phys. 84, 4749 (1998).
26. V. C. Venezia, D. J. Eaglesham, T. E. Haynes, A. Agarwal, D. C. Jacobson, H.-J. Gossmann, and F. H. Baumann, Appl. Phys. Lett. 73, 2980 (1998).
27. S. V. Koveshnikov and G. A. Rozgonyi, J. Appl. Phys. 84, 3078 (1998).