Properties of the second-order nonlinear optical susceptibility χ(2) in asymmetric undoped AlGaAs/InGaAs double quantum wells

Journal of Applied Physics

Volumn 86, Issue 3, 1999, Pages 1467-1471

  Park, Tae Ik ^a   Gumbs, Godfrey ^a,b   Chen, Y C ^a  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRON ENERGY LEVELS; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; NONLINEAR OPTICS; SECOND HARMONIC GENERATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

GRADED INDEX OF REFRACTION SEPARATE CONFINEMENT HETEROSTRUCTURES; NONLINEAR OPTICAL SUSCEPTIBILITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032607714     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370914     Document Type: Article

References (16)

1. For a review, see R. W. Boyd, Nonlinear Optics (Academic, New York, 1992).
2. J. Khurgin, Appl. Phys. Lett. 51, 2100 (1987).
3. E. Rosencher, P. Bois, J. Nagle, E. Costard, and S. Delaite, Appl. Phys. Lett. 55, 1597 (1989).
4. S. J. B. Yoo, M. M. Fejer, R. L. Byer, and J. S. Harris, Jr., Appl. Phys. Lett. 58, 1724 (1991).
5. P. J. Harshman and S. Wang, Appl. Phys. Lett. 60, 1277 (1992).
6. M. J. Shaw, K. B. Wong, and M. Jaros, Phys. Rev. B 48, 2001 (1993).
7. M. Seto et al., Appl. Phys. Lett. 65, 2969 (1994).
8. Y. M. Cai, S. Yamada, O. Zamani-Khamiri, A. P. Garito, and K. Y. Wong, Phys. Rev. B 55, 12985 (1997).
9. H. Kuwatsuka and H. Ishikawa, Phys. Rev. B 50, 5323 (1994).
10. L. Tsang, D. Ahn, and S. L. Chuang, Appl. Phys. Lett. 52, 697 (1988).
11. M. M. Fejer, S. J. B. Yoo, R. L. Byer, A. Harwitt, and J. S. Harris, Jr., Phys. Rev. Lett. 62, 1041 (1989).
12. L. C. West and S. J. Eglash, Appl. Phys. Lett. 46, 1156 (1985).
13. For a derivation of Eq. (4), see Y. R. Shen, The Principles of Nonlinear Optics (Wiley, New York, 1984).
14. R. Enderlein and N. J. M. Horing, Fundamentals of Semiconductor Physics and Devices (World Scientific, Singapore, 1997), Sec. 3.7.
15. g is the discontinuity of the energy gap for the two bulk materials forming the adjacent layers.
16. L. Lang and K. Nish, Appl. Phys. Lett. 45, 98 (1984).