Electron-phonon relaxation rates in InGaAs-InP and HgCdTe-CdTe quantum wells

Journal of Applied Physics

Volumn 85, Issue 10, 1999, Pages 7276-7281

  Alcalde, Augusto M ^a   Weber, Gerald ^b  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b UNIVERSIDADE SÃO FRANCISCO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; MERCURY COMPOUNDS; PHONONS; RELAXATION PROCESSES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

ELECTRON PHONON RELAXATION; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032607439     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370544     Document Type: Article

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