Arrhenius analysis optical transitions in strained InGaAsP quantum wells

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 537-542

  Lucio A D ^a   Cury, L A ^a   Matinaga, F M ^a   Sampaio, J F ^a   Bernussi, A A ^b   De Carvalho Jr , W ^b  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b Fund Ctro Pesquisa D   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ARRHENIUS PLOT; OPTICAL TRANSITIONS; STRAINED SINGLE QUANTUM WELLS (QW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032606415     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370701     Document Type: Article

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