Thermal desorption spectra of SiO2 films deposited on Si and on thermal SiO2 by tetraethylorthosilicate/O3 atmospheric-pressure chemical vapor deposition

Journal of Applied Physics

Volumn 85, Issue 10, 1999, Pages 7140-7145

  Cheng, Degang ^a   Tsukamoto, Koji ^a,c   Komiyama, Hiroshi ^a   Nishimoto, Yuko ^b   Tokumasu, Noboru ^b   Maeda, Kazuo ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b Semiconductor Process Laboratory   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DESORPTION; FILM GROWTH; MATHEMATICAL MODELS; SILICA; SILICATES; SILICON; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); TETRAETHYLORTHOSILICATES; THERMAL DESORPTION SPECTROSCOPY (TDS);

DIELECTRIC FILMS;

EID: 0032606287     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370525     Document Type: Article

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