Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure

Journal of Applied Physics

Volumn 86, Issue 6, 1999, Pages 3391-3397

  Guclu A D ^a   Rejeb, C ^a   Maciejko, R ^a   Morris, D ^a,b   Champagne, A ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; COMPUTER SIMULATION; EMISSION SPECTROSCOPY; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN;

CARRIER DYNAMICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032606152     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371219     Document Type: Article

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