Experimental investigation on the HBM ESD characteristics of CMOS devices in a 0.35-μm silicided process

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1999, Pages 35-38

  Chen, Tung Yang ^a   Ker, Ming Dou ^a   Wu, Chung Yu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ELECTROSTATICS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; MOS DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ELECTROSTATIC DISCHARGES; GATE DRIVEN EFFECT; HUMAN BODY MODEL; SILICIDED PROCESS; SUBSTRATE TRIGGERED EFFECT;

CMOS INTEGRATED CIRCUITS;

EID: 0032599280     PISSN: 1524766X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)