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Volumn , Issue , 1999, Pages 25-26
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Temperature-insensitive luminescence linewidth from highly-uniform strain-reduced InAs quantum dots
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
ELECTRIC CURRENTS;
ELECTRONIC DENSITY OF STATES;
OPTICAL DEVICES;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SPECTROSCOPY;
STRAIN;
TEMPERATURE;
BOLTZMANNS CONSTANT;
LUMINESCENCE LINEWIDTHS;
PHOTOLUMINESCENCE SPECTRA;
THRESHOLD CURRENT;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0032599098
PISSN: 10994742
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
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Times cited : (2)
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References (5)
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