Efficiency of power devices using full Cu metallization technologies

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 67-70

  Kobori, Etsuyoshi ^a   Izumi, Naoki ^a   Kumamoto, Nobuhisa ^a   Hamazawa, Yasushi ^a   Matsumoto, Muneyuki ^a   Yamamoto, Koji ^a   Kamisawa, Akira ^a  

^a ROHM CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC RESISTANCE; ELECTRIC WIRING; ELECTROMIGRATION; INTEGRATED CIRCUIT LAYOUT; LSI CIRCUITS; METALLIZING; SEMICONDUCTOR DEVICE STRUCTURES;

DUAL DAMASCENE STRUCTURE; POWER DEVICES;

POWER ELECTRONICS;

EID: 0032598943     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)