Recessed-gate IGBT structure

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 149-152

  Nemoto, Michio ^a   Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; GATES (TRANSISTOR); JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THYRISTORS;

BREAKDOWN VOLTAGE; INSULATED GATE BIPOLAR TRANSISTOR; RECESSED GATE STRUCTURE; SAFE OPERATING AREA; VOLTAGE DROP;

BIPOLAR TRANSISTORS;

EID: 0032598931     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)