1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 141-144

  Udrea, F ^a   Waind, P R ^a   Thomson, J ^a   Trajkovic, T ^a   Chan, S S M ^a   Huang, S ^a   Amaratunga, G A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

SWITCHING LOSSES; TRENCH INSULATED GATE BIPOLAR TRANSISTORS; VOLTAGE DROP;

BIPOLAR TRANSISTORS;

EID: 0032598930     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (18)