Ultra-low Rdson 12 v P-channel trench MOSFET

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 303-306

  Kinzer, D ^a   Asselanis, D ^a   Carta, R ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRONICS PACKAGING; ETCHING; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; LITHIUM BATTERIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

GATE DRIVES; LITHIUM ION BATTERY VOLTAGE;

MOSFET DEVICES;

EID: 0032598891     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (1)