Ultrafast response times and enhanced optical nonlinearity in annealed and Beryllium doped low-temperature grown GaAs

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1999, Pages 101-104

  Haiml, M ^a   Prasad, A ^a   Morier Genoud, F ^a   Siegner, U ^a   Keller, U ^a   Weber, E R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE GROWTH; ULTRAFAST ALL OPTICAL SWITCHING;

ANNEALING; BERYLLIUM; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; NONLINEAR OPTICS; SEMICONDUCTOR DOPING; ULTRAFAST PHENOMENA;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032598539     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)