X-ray studies of AlxGa1-xAs implanted with 1.5 MeV Se ions

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1999, Pages 181-184

  Wierzchowski, W ^a   Wieteska, K ^a   Turos, A ^a   Graeff, W ^a   Groetzschel, R ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; ION IMPLANTATION; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SELENIUM; TEMPERATURE; X RAY DIFFRACTION;

ALUMINUM GALLIUM ARSENIDE EPITAXIAL LAYERS; LOW DISLOCATION DENSITY; RELATIVELY THICK LAYER; SYNCHROTRON XRAY SOURCES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032598524     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)