Neutron and proton irradiation: effects on the active layer width and electric field distribution in semi-insulating GaAs Schottky diodes

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1999, Pages 153-156

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a   Canali, C ^a   Nava, F ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; NEUTRON IRRADIATION; PROTON IRRADIATION; SCHOTTKY BARRIER DIODES; SPECTROSCOPIC ANALYSIS;

ELECTRIC FIELD DISTRIBUTION; SEMI INSULATING GALLIUM ARSENIDE; SPECTROSCOPIC MEASUREMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032598519     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (21)