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Volumn 35, Issue 1, 1999, Pages 100-106

Semiconductor optical active devices for photonic networks

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SINGLE MODE FIBERS; WAVELENGTH DIVISION MULTIPLEXING;

EID: 0032598302     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (10)

References (7)
  • 1
    • 0022722288 scopus 로고
    • Reduction of Lasing Threshold Current Density by the Lowering of Valence Band Effective Mass
    • E. Yablonovitch and E. O. Kane: Reduction of Lasing Threshold Current Density by the Lowering of Valence Band Effective Mass. J. Lightwave Technol., LT-4, 5, pp.504-506 (1986).
    • (1986) J. Lightwave Technol. , vol.LT-4 , Issue.5 , pp. 504-506
    • Yablonovitch, E.1    Kane, E.O.2
  • 2
    • 0028419040 scopus 로고
    • Engineering of Barrier Band Structure for Electroabsorption MQW Modulators
    • R. Sahara, K. Morito, and H. Soda: Engineering of Barrier Band Structure for Electroabsorption MQW Modulators. Electron. Lett., 30, 9, pp.698-699 (1994).
    • (1994) Electron. Lett. , vol.30 , Issue.9 , pp. 698-699
    • Sahara, R.1    Morito, K.2    Soda, H.3
  • 3
    • 0028430556 scopus 로고
    • Strained-compensated MQW electroabsorption Modulator for Increased Optical Power Handling
    • I. K. Czajkowski, M. A. Gibbon, G. H. B. Thompson, P. D. Greene, A. D. Smith, and M. Silver: Strained-compensated MQW electroabsorption Modulator for Increased Optical Power Handling. Electron. Lett., 30, 11, pp.900-901 (1994).
    • (1994) Electron. Lett. , vol.30 , Issue.11 , pp. 900-901
    • Czajkowski, I.K.1    Gibbon, M.A.2    Thompson, G.H.B.3    Greene, P.D.4    Smith, A.D.5    Silver, M.6
  • 4
    • 0029639447 scopus 로고
    • High Power Modulator Integrated DFB Laser Incorporating Strain-Compensated MQW and Graded SCH Modulator for 10 Gbit/s
    • K. Morito, R. Sahara, K. Sato, Y. Kotaki, and H. Soda: High Power Modulator Integrated DFB Laser Incorporating Strain-Compensated MQW and Graded SCH Modulator for 10 Gbit/s. Electron. Lett., 31, 12, pp.975-976 (1995).
    • (1995) Electron. Lett. , vol.31 , Issue.12 , pp. 975-976
    • Morito, K.1    Sahara, R.2    Sato, K.3    Kotaki, Y.4    Soda, H.5
  • 6
    • 0029638927 scopus 로고
    • High Temperature Operation of 1.3-μm Narrow Beam Divergence Tapered Thickness Waveguide BH Lasers
    • T. Yamamoto, H. Kobayashi, M. Ekawa, T. Fujii, H. Soda, and M. Kobayashi: High Temperature Operation of 1.3-μm Narrow Beam Divergence Tapered Thickness Waveguide BH Lasers. Electron. Lett., 31, 25, pp.2178-2179 (1995).
    • (1995) Electron. Lett. , vol.31 , Issue.25 , pp. 2178-2179
    • Yamamoto, T.1    Kobayashi, H.2    Ekawa, M.3    Fujii, T.4    Soda, H.5    Kobayashi, M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.