Study on defects in CZ-Si crystals grown under three different cusp magnetic fields by infrared light scattering tomography

Journal of Crystal Growth

Volumn 205, Issue 1, 1999, Pages 50-58

  Ma, Minya ^a   Ogawa, Tomoya ^a   Watanabe, Masahito ^b   Eguchi, Minoru ^b  

^a GAKUSHUIN UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); LIGHT SCATTERING; MAGNETIC FIELD EFFECTS; NUMERICAL ANALYSIS; OXYGEN; PHOTOLUMINESCENCE;

CUSP MAGNETIC FIELD CONFIGURATIONS; LOWER DEFECT DENSITY; MULTI CHROIC INFRARED LIGHT SCATTERING TOMOGRAPHY; UNIFORM OXYGEN DISTRIBUTION;

SEMICONDUCTING SILICON;

EID: 0032598209     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00255-9     Document Type: Article

References (16)

1. Hicks T.W., Organ A.E., Riley N. J. Crystal Growth. 94:1989;213.
2. Riley N. J. Crystal Growth. 97:1989;76.
3. Series R.W., Hurle D.T.J. J. Crystal Growth. 113:1991;305.
4. Kakimoto K., Eguchi E., Ozoe H. J. Crystal Growth. 180:1997;442.
5. Hirata H., Hoshikawa K. J. Crystal Growth. 96:1989;747.
6. Hirata H., Hoshikawa K. J. Crystal Growth. 98:1989;657.
7. Keene B.J. Surf. Interface Anal. 10:1987;367.
8. Watanabe M., Eguchi M., Kakimoto K., Hibiya T. J. Crystal Growth. 133:1993;23.
9. Watanabe M., Eguchi M., Kakimoto K., Ono H., Hibiya T. J. Crystal Growth. 151:1995;285.
10. Watanabe M., Eguchi M., Hibiya T. J. Crystal Growth. 193:1998;402.
11. Ogawa T., Nango N. Rev. Sci. Instrum. 57(6):1986;1135.
12. Hourai M., Kajita E., Nagashima T., Fujiwara H., Umeno S., Sadamitsu S., Miki S., Shigematsu T. Mater. Sci. Forum. 196-201:1995;1713.
13. Puzanov N.I., Eidenzon A.M. J. Crystal Growth. 137:1994;642.
14. Voronkov V.V. J. Crystal Growth. 59:1982;625.
15. Puzanov N.I., Eidenzon A.E., Puzanov D.N. J. Crystal Growth. 178:1997;468.
16. T. Ogawa, N. Nango, J. Appl. Phys. (1999), to be published.