Pre-silicon parameter generation methodology using BSIM3 for device/circuit concurrent design

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 1999, Pages 359-362

  Miyama, Mikako ^a   Kamohara, Shiro ^a   Hiraki, Mitsuru ^a   Onozawa, Kazunori ^a   Kunitomo, Hisaaki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POWER UTILIZATION; MICROPROCESSOR CHIPS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

DEVICE CIRCUIT CONCURRENT DESIGN; PRE SILICON PARAMETERS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0032597808     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)