Studies of interface formation between Co with GaAs(100) and S-passivated GaAs(100)

Journal of Electron Spectroscopy and Related Phenomena

Volumn 101, Issue , 1999, Pages 485-488

  Zhang, F P ^a   Xu, P S ^a   Zhu, C G ^a   Lu, E D ^a   Guo, H Z ^a   Xu, F Q ^a   Zhang, X Y ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COBALT; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; INTERDIFFUSION (SOLIDS); METALLIC FILMS; NITROGEN COMPOUNDS; PASSIVATION; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR; SYNCHROTRON RADIATION;

SYNCHROTRON RADIATION PHOTOEMISSION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032595783     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(98)00487-3     Document Type: Article

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