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Volumn 11, Issue 31, 1999, Pages 6035-6043
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Modelling of semiconductor nanostructured devices within the tight-binding approach
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Author keywords
[No Author keywords available]
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Indexed keywords
AMPLIFIERS (ELECTRONIC);
ELECTRONIC PROPERTIES;
HIGH ELECTRON MOBILITY TRANSISTORS;
NANOSTRUCTURED MATERIALS;
OPTICAL PROPERTIES;
TIGHT-BINDING METHOD;
SEMICONDUCTOR DEVICE MODELS;
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EID: 0032595717
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/11/31/311 Document Type: Article |
Times cited : (2)
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References (24)
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