Capacitance between adjacent edge channels at quantum Hall plateaux

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 27-29

  Oto, K ^a   Arai, K ^a   Uno, S ^a   Takaoka, S ^a   Murase, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; HALL EFFECT; HETEROJUNCTIONS; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TWO DIMENSIONAL;

QUANTUM HALL PLATEAU; SCHOTTKY GATES;

QUANTUM ELECTRONICS;

EID: 0032594778     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00140-9     Document Type: Article

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