SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 289-292

Excitation process of two-dimensional plasmons excited by femtosecond laser pulses

(5) Sekine, N a Hirakawa, K a,b Vossebuerger, M c Haring Bolivar, P c Kurz, H c

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c RWTH AACHEN UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC EXCITATION; EMISSION SPECTROSCOPY; FERMI LEVEL; LASER PULSES; MOLECULAR BEAM EPITAXY; PLASMA OSCILLATIONS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TWO DIMENSIONAL;

EXCITATION WAVELENGTH; PLASMON EXCITATIONS; TWO DIMENSIONAL PLASMONS;

SEMICONDUCTOR PLASMAS;

EID: 0032594541 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(99)00216-6 Document Type: Article

Times cited : (1)

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