Raman spectroscopic study of Mn-doped Bi4Ge3O12

Solid State Communications

Volumn 112, Issue 1, 1999, Pages 11-15

  Mihailova, B ^a   Toncheva, D ^b   Gospodinov, M ^b   Konstantinov, L ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL LATTICES; ELECTRIC INSULATORS; ELECTRONIC STRUCTURE; LIGHT SCATTERING; MANGANESE; PHONONS; POINT DEFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

INELASTIC LIGHT SCATTERING; INTERATOMIC INTERACTION;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 0032592882     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00299-9     Document Type: Article

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