Thermalization gaps of the ultra-thin a-Si:H well layers in a -Si:H/a-Si3N4:H multilayers

Solid State Communications

Volumn 111, Issue 12, 1999, Pages 693-697

  Murayama, K ^a   Katagiri, N ^a   Miyazaki, S ^b   Hirose, M ^b  

^a NIHON UNIVERSITY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON TRAPS; ENERGY GAP; LUMINESCENCE; MULTILAYERS; SILICON NITRIDE; THERMAL EFFECTS; ULTRATHIN FILMS;

DISORDERED SYSTEMS; EXCITATION ENERGY; STOKES SHIFT; THERMALIZATION GAPS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032592857     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00273-2     Document Type: Article

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