MBE growth of ferroelectric YMnO3 thin films on Si(111) using Y2O3 buffer layers

Materials Research Society Symposium - Proceedings

Volumn 541, Issue , 1999, Pages 585-590

  Imada, Shogo ^a   Shouriki, Shigeto ^a   Tokumitsu, Eisuke ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; FILM GROWTH; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; THIN FILMS; YTTRIUM COMPOUNDS;

CAPACITANCE VOLTAGE CHARACTERISTICS; FERROELECTRIC THIN FILMS; X RAY ROCKING CURVE MEASUREMENTS;

DIELECTRIC FILMS;

EID: 0032592282     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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