Electronic structure and transport properties of CoSb3: a narrow band-gap semiconductor

Materials Research Society Symposium - Proceedings

Volumn 545, Issue , 1999, Pages 315-320

  Sofo, J O ^a   Mahan, G D ^a  

^a INSTITUTO BALSEIRO   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; SEMICONDUCTOR MATERIALS; TRANSPORT PROPERTIES;

NARROW BAND GAP SEMICONDUCTOR; TWO BAND KANE MODEL; VALENCE BAND;

COBALT COMPOUNDS;

EID: 0032591204     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (26)