Mullite diffusion barriers for SiC-C/C composites produced by pulsed laser deposition

Materials Research Society Symposium - Proceedings

Volumn 555, Issue , 1999, Pages 79-84

  Fritze, H ^a   Schnittker, A ^a   Witke, T ^b   Ruscher C ^c   Weber, S ^d   Scherrer, S ^d   Schultrich, B ^b   Borchardt, G ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR MATERIAL AND BEAM TECHNOLOGY IWS   (Germany)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^d UNIVERSITÉ DE LORRAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DEPOSITION; DIFFUSION IN SOLIDS; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LASER ABLATION; OXIDATION; PULSED LASER APPLICATIONS; SILICA; STOICHIOMETRY; THERMOGRAVIMETRIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

DIFFUSIVITY MEASUREMENT; MULLITE DIFFUSION BARRIERS; MULLITE SILICON OXIDE INTERFACE; PULSED LASER DEPOSITION;

CARBON CARBON COMPOSITES;

EID: 0032591091     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

1. K. L. Luthra, R. N. Singh, and Brun, M. K., Toughened Silcomp Composites - Process and Preliminary Properties, J. Am. Ceram. Soc. 72, pp. 79 (1993).
2. F. Danes, E. Saint-Aman and L. Coudrier, The Si-C-O System, J. Mat. Sci., , 28, pp. 489 (1993).
3. N. S. Jacobson, Corrosion of Silicon-Based Ceramics in Combustion Environments, J. Am. Ceram. Soc., , 76, pp. 3 (1993).
4. K. N. Lee, R. A. Miller and N. S. Jacobson, New Generation of Plasma-Sprayed Mullite Coatings on Silicon Carbide, J. Am. Ceram. Soc. 78, pp. 705 (1995).
5. 2 Lasers, J. Appl. Surf. Sci. 109-110, pp. 362-365 (1997).
6. 2, J. Am. Ceram. Soc. 45, pp. 229 (1962).
7. J. D. Kahlen, R.S. Boyce and J. D. Cawley, Oxygen Tracer Diffusion in Vitreous Silica, J. Am. Ceram. Soc. 74, pp. 203 (1991).
8. H. Fritze, J. Jojic, Th. Witke, C. Rüscher, S. Weber, S. Scherrer, B. Schultrich and G. Borchardt, Mullite Based Oxidation Protection for SiC-C/C Composites in Air at Temperatures up to 1900 K, Key Enginieering Materials 132-136, pp. 1629-1632 (1997).