Electrcal properties of cyano-substituted oligothiophenes towards N-type organic semiconductors

Synthetic Metals

Volumn 101, Issue 1-3, 1999, Pages 620-621

  Demanze, F ^a   Yassar, A ^a   Fichou, D ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

OLIGOMERS; REACTION KINETICS; SCHOTTKY BARRIER DIODES; SYNTHESIS (CHEMICAL); VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRIC PROPERTIES; OHMIC CONTACTS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CYANO-SUBSTITUTED OLIGOTHIOPHENES; ELECTRON INJECTION; ELECTRON RECTIFICATION; ORGANOTIN INTERMEDIATES; CYANO END CAPPED SEXITHIOPHENE; CYANO SUBSTITUTED OLIGOTHIOPHENES; ELECTRON AFFINITY MATERIALS; PALLADIUM CATALYZED COUPLING REACTION; RECTIFICATION RATIO;

SEMICONDUCTING POLYMERS; OLIGOMERS;

EID: 0032590835     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(98)01340-x     Document Type: Article

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