Electronic conduction mechanism in thermoelectric semiconductor of boron-doped iron disilicides

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 63, Issue 11, 1999, Pages 1372-1376

  Isoda, Yukihiro ^a   Nishida, Isao Albart ^a   Ohashi, Osamu ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b NIIGATA UNIVERSITY   (Japan)

Author keywords

Boron; Hopping conduction; Iron disilicide; Resistivity; Seebeck coefficient; Semiconductor to metal transition; Small polaron model

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; HOT PRESSING; PHASE TRANSITIONS; SEEBECK EFFECT; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SINTERING; SOLID SOLUTIONS;

HOPPING CONDUCTIONS; IRON DISILICIDE; SEMICONDUCTOR-TO-METAL TRANSITIONS; THERMOELECTRIC SEMICONDUCTORS;

IRON COMPOUNDS;

EID: 0032589551     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet1952.63.11_1372     Document Type: Article

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