Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy

Applied Physics Letters

Volumn 73, Issue 22, 1998, Pages 3271-3272

  Bhargava, S ^a   Zheng, C ^a   Ko, J ^a   Chin, M A ^a   Coldren, L A ^a   Narayanamurti, V ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRON EMISSION; EPITAXIAL GROWTH; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE;

BALLISTIC ELECTRON EMISSION SPECTROSCOPY; CONDUCTION BAND OFFSET; EMISSION WAVELENGTH; VERTICAL CAVITY LASERS;

ELECTRON SPECTROSCOPY;

EID: 0032583031     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122741     Document Type: Article

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