Persistent photoconductivity in Si delta-doped GaAs at low doping concentration

Applied Physics Letters

Volumn 73, Issue 22, 1998, Pages 3235-3237

  Chen, C Y ^a   Thio, Tineke ^a   Wang, K L ^b   Alt, K W ^b   Sharma, P C ^b  

^a NEC LABORATORIES AMERICA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; MAGNETIC FIELDS; MAGNETORESISTANCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ANNEALING TEMPERATURES; DELTA DOPING; HALL DENSITY;

PHOTOCONDUCTIVITY;

EID: 0032583022     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122729     Document Type: Article

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