Basal plane oxygen vapor pressure of Co-doped YBa2Cu3O7-δ

Applied Physics Letters

Volumn 72, Issue 26, 1998, Pages 3512-3514

  Sydow, J P ^a   Buhrman, R A ^a   Moeckly, B H ^b  

^a Cornell University   (United States)

^b Conductus Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BINDING ENERGY; INTERFACES (MATERIALS); JOSEPHSON JUNCTION DEVICES; OXYGEN; STOICHIOMETRY; SUPERCONDUCTING TRANSITION TEMPERATURE; SUPERCONDUCTIVITY; THERMAL EXPANSION; TRANSPORT PROPERTIES; VAPOR PRESSURE;

BASAL PLANE OXYGEN VAPOR PRESSURE; OXYGEN LOSS;

THIN FILMS;

EID: 0032577832     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121644     Document Type: Article

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