Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

Applied Physics Letters

Volumn 73, Issue 26, 1998, Pages 3803-3805

  Wang, Zhi Jie ^a   Chua, Soo Jin ^a   Zhou, Fan ^b   Wang, Wei ^b   Wu, Rong Han ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

BURIED HETEROSTRUCTURE; CURRENT BLOCKING LAYER; NATIVE OXIDE BURIED HETEROSTRUCTURE; REVERSE BIASED JUNCTION;

QUANTUM WELL LASERS;

EID: 0032576506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122899     Document Type: Article

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