High critical current density in epitaxial HgBa2CaCu2OX thin films

Applied Physics Letters

Volumn 73, Issue 20, 1998, Pages 2989-2991

  Yan, S L ^a   Xie, Y Y ^a   Wu, J Z ^a   Aytug, T ^a   Gapud, A A ^a   Kang, B W ^a   Fang, L ^b   He, M ^b   Tidrow, S C ^c   Kirchner, K W ^c   Liu, J R ^d   Chu, W K ^d  

^a UNIVERSITY OF KANSAS   (United States)

^b NANKAI UNIVERSITY   (China)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; FABRICATION; MORPHOLOGY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACES; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION;

MICROWAVE PASSIVE DEVICES; PRECURSOR FILMS;

CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY);

EID: 0032538725     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122653     Document Type: Article

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