Persistent photoconductivity in SiGe/Si quantum wells

Journal of Applied Physics

Volumn 84, Issue 2, 1998, Pages 877-880

  Tsai, L C ^a   Huang, C F ^a   Fan, J C ^a   Chang, Y H ^a   Chen, Y F ^a   Tsai, W C ^b   Chang, C Y ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRONS; HETEROJUNCTIONS; INTERFACES (MATERIALS); OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM WELLS; SURFACES; TEMPERATURE;

ALLOY POTENTIAL FLUCTUATIONS; CARRIER MOBILITY; DECAY KINETICS; EXCITON LOCALIZATION; PHOTOEXCITATION; STRETCHED EXPONENTIAL FUNCTION; TEMPERATURE DEPENDENCE;

PHOTOCONDUCTIVITY;

EID: 0032527160     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368150     Document Type: Article

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