Comparison of a rate-equation model with experiment for the resonant tunneling diode in the scattering-dominated regime

Journal of Applied Physics

Volumn 84, Issue 2, 1998, Pages 1140-1148

  Mattia, J P ^a,c   McWhorter, A L ^a   Aggarwal, R J ^b,d   Rana, F ^b   Brown, E R ^a   Maki, P ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b USA   (United States)

^c NOKIA RESEARCH CENTER   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; EQUIVALENT CIRCUITS; FABRICATION; MATHEMATICAL MODELS;

RATE EQUATION MODEL; RESONANT TUNNELING DIODE;

TUNNEL DIODES;

EID: 0032527159     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368115     Document Type: Review

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