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Volumn 279, Issue 5348, 1998, Pages 202-205

Femtosecond dynamics of electron localization at interfaces

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ELECTRONS; INTERFACES (MATERIALS); PARAFFINS; PHOTOELECTRON SPECTROSCOPY; SILVER; THIN FILMS;

EID: 0032498148     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.279.5348.202     Document Type: Article
Times cited : (221)

References (39)
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    • ∥) to self-trapping. We ignored the possible contribution from intraband relaxation by way of electron-phonon scattering for the following reasons. First, a perturbation calculation of the rate of scattering against 2D acoustic phonons of the alkane layers did not give reasonable agreement with the energy dependence of the decay rate of delocalized states. Second, delocalized states at 50 K decay faster than at 120 K, contradicting the scattering theory prediction. However, scattering may play a role in causing the finite rise time of the delocalized state. It may also be related to the similar dynamics recently observed in the neopentane-Ag(111) system. Further studies are required to address these issues.
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    • However, at 50 K, the first-order term accounts for only 83% of the rate.
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    • note
    • loc ∼ 0.25 eV.
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    • note
    • We thank X. Song for helpful discussions. Supported by the Director, Office of Energy Research, Office of Basic Energy Sciences, Chemical Sciences Division of the U.S. Department of Energy, under contract DE-AC03-76SF00098. Specialized equipment used in some experiments described herein was supported by NSF.


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