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Volumn 322, Issue 1-2, 1998, Pages 104-107
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Preparation and ferroelectric properties of BaTiO3 thin films by atmospheric-pressure metalorganic chemical vapor deposition
a,b b b b b a |
Author keywords
Atmospheric pressure metalorganic chemical vapor deposition; Coercive field; Ferroelectric thin film; Rapid thermal annealing; Remanent polarization; Tensile stress
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Indexed keywords
ANNEALING;
ATMOSPHERIC PRESSURE;
BARIUM TITANATE;
COERCIVE FORCE;
CRYSTAL ORIENTATION;
FERROELECTRIC MATERIALS;
FILM PREPARATION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PERMITTIVITY;
POLYCRYSTALLINE MATERIALS;
SILICON;
THIN FILMS;
CURIE TEMPERATURE;
DIELECTRIC FILMS;
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EID: 0032496508
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(97)00965-6 Document Type: Article |
Times cited : (37)
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References (22)
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