High-speed InGaAsP/InP selective proton bombarded buried crescent lasers with optical field attenuation regions

Electronics Letters

Volumn 34, Issue 1, 1998, Pages 88-90

  Zhang, Baijun ^a   Yi, Maobin ^a   Song, Junfeng ^a   Li, Dehui ^a   Zhang, Daming ^a   Gao, Dingsan ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; CRYSTAL DEFECTS; ELECTROMAGNETIC WAVE ATTENUATION; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

OPTICAL FIELD ATTENUATION; PROTON BOMBARDMENT;

SEMICONDUCTOR LASERS;

EID: 0032495323     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980041     Document Type: Article

References (7)

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