On the transmittance properties of electrolytically deposited thin zinc oxide films

Journal of Physics D: Applied Physics

Volumn 31, Issue 19, 1998, Pages

  Ng Cheng Chin, F ^a   Roslin, M ^a   Gu, Z H ^a   Fahidy, T Z ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODEPOSITION; LIGHT TRANSMISSION; ZINC OXIDE;

ELECTROLYTIC DEPOSITION; OPTICAL BAND GAP;

THIN FILMS;

EID: 0032494343     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/19/002     Document Type: Article

References (11)

1. Switzer J A, Hung C J, Breyfogle B E, Shumsky M G, Leeuwen R V and Golden T D 1994 Science 264 1505
2. Izaki M and Omi T 1996 J. Electrochem. Soc. 143 L53
3. Izaki M and Omi T 1996 Appl.Phys.Lett. 68 2439
4. Gu Z H, Fahidy T Z, Hornsey R and Nathan A 1997 Can. J. Chem. 75 1439
5. Ng-Cheng-Hin F and Roslin M 1998 Electrolytic preparation of thin metal doped zinc oxide films, final year research report (ChE 047), Department of Chemical Engineering, University of Waterloo
6. Wen Fa Wu, Chion Bi-Shiou and Shu-Ta-Hsieh 1994 Semicond. Sci. Technol. 9 1242
7. Besseis B, Ezzaouia H and Bennaceur R 1993 Semicond. Sci. Technol. 8 1671
8. Krunks M and Mellikov E 1995 Thin Solid Films 270 33
9. Izaki M and Omi T 1997 J. Electrochem. Soc. 114 L3
10. Chion B S and Hsieh S T 1993 Thin Solid Films 229 146
11. Ohhata Y, Shinaki F and Yoshida S 1979 Thin Solid Films 59 255